2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SD1033 features high voltage v ceo =150v absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 200 v collector to emitter voltage v ceo 150 v emitter to base voltage v ebo 5v peak collector current *1 i cp 3a collector current i c 2a collector power dissipation ta = 25 *2 p t 2w junction temperature t j 150 storage temperature t stg -55to+150 *pw 10ms,duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm 2 x0.7mm electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =150v,i e =0 50 a emitter cutoff current i ebo v eb =4v, ic =0 50 a dc current gain * h fe v ce =10v,i c =0.4a 40 100 200 collector saturation voltage * v ce(sat) i c =500ma,i b = 0.4a 0.2 1.0 v gain saturation voltage ft v ce =10v,i e =0.4a 10 mhz *pw 350s,duty cycle 2% h fe classification marking m l k hfe 40 to 80 60 to 120 100 to 200 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification 4008-318-123
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